| 摘要 |
PURPOSE:To restrain any ion dispersion and side etching by radicals from occurring by a method wherein the etching process is performed at the pressure not exceeding 0.5 Pa and the surface temperature of semiconductor substrate not exceeding 25 deg.C. CONSTITUTION:A thin insulating film or metallic film 3 is formed on an organic film 2 coated on a semiconductor substrate 1 to be processed for hardening and then patterned by photoetching process. The etching process is performed using the patterned insulating film or metallic film as a mark at the pressure not exceeding 0.5 Pa and the surface temperature of semiconductor substrate 1 not exceeding 25 deg.C. Through these procedures, any ion dispersion and side etching by radicals are restranined from occurring to minimize the inversion difference from the mask.
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