| 摘要 |
PURPOSE:To establish basic technologies for forming arbitrary alignment of atoms and for controlling an atom, by providing a second high frequency source, which projects a high frequency that is different from a first high frequency source for growing plasma, on the surface of samples, thereby forming an intentional chemical reaction path. CONSTITUTION:Discharging gas is introduced in a vacuum chamber 11. A magnetic field, which is in electron-cycrotron resonating conditions together with the high frequency from a first high frequency source, is generated. Plasma 6 is generated. Active particles in the plasma 6 are made to react with the surfaces of samples 14, which are provided in the vacuum chamber 11. In this apparatus, a second high frequency source is provided. This source projects a high frequency, which has the frequency value different from that of said first high frequency source, on the surfaces of the samples 14. For example, two open type antennas 16 and 17 are provided on a sample stage 13. The high frequencies having the different frequency values can be projected on a plasma stream 10. The high frequencies can be varied with a power source panel 23 and a control panel 24. The high frequencies are supplied through two amplifiers 21, 22 in a power amplifier panel 20 and through waveguides 18, 19 for millimeter waves.
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