| 摘要 |
<p>PURPOSE:To form the patterns for a plurality of layers, for which high overlapping accuracy is required, and to implement a VLSI having excellent performance, by performing exposure with a specified amount of the exposure when the X-ray image of an X-ray mask is exposed on resist on a semiconductor substrate to be machined. CONSTITUTION:X rays are transmitted through a supporting film 2. A plurality of X-ray absorber layers 1a and 1b are laminated on the supporting film 2. At least a gate pattern and a contact hole patterns are formed on each layer of the X-ray absorber layers 1 in a multiple contrast X ray mask 3. This X-ray mask 3 is used. The image of the X rays is exposed to resist 7 and 12 on a semiconductor substrate 4 to be machined. Here, the exposure is performed with the amount of the exposure so that either of a region, on which the X rays transmitted through the ith layer of the X-ray absorber layer 1 are projected, or a region, on which the transmitted X rays are not projected, is made to remain at a least developing step. Thereafter, resist patterns 8 and 13 are formed by the development of the resists 7 and 12. With the patterns as masks, the semiconductor substrate to be machined is etched. Thus a semiconductor device having a gate 9 and contact holes 14 is manufactured.</p> |
