| 摘要 |
PURPOSE:To remove the waste of a radiator plate, and to shorten the time required by measuring the characteristics of a semiconductor laser element under the state, in which the laser element is brought into contact onto the radiator plate, and determining the execution of die bonding by the result of the measurement. CONSTITUTION:A semiconductor laser element 7 is attracted and supported by a collet 6, and brought into contact onto a radiator plate 1. Currents are injected to the semiconductor laser element 7 by a power supply 5 under the state, a laser is oscillated, and laser beams 20 are monitored by a photodetector 14 for monitor. Injection current-optical output characteristics are investigated, and the nondefective or defective semiconductor laser element 7 is decided by threshold currents, external differential quantum efficiency, the presence of a kink, etc. Die bonding is not conducted and the semiconductor laser element 7 is disposed when it is regarded as a defective, and die bonding is performed by heating the radiator plate 1 when it is regarded as a nondefective. Accordingly, the time required for die bonding is shortened.
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