| 摘要 |
PURPOSE:To make it possible to form an excellent contact using a simple means by a method wherein, when an impurity diffusion layer is formed, both a shallow impurity implantation and a deep impurity implantation are performed in a superposing manner. CONSTITUTION:A metal is selectively buried in a contact hole 3, having a high density impurity layer on which the distribution of impurity density is made uniform by introducing impurities at least twice or more on a semiconductor 1, by reacting the gas containing metal. Accordingly, the high density section of impurity profile can be made uniform. As a result, the increase or the irregularity in contact resistance can be prevented even when the depth of the contact position between a double film 5 and an impurity diffusion layer 4, for example, is uneven.
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