发明名称 |
Refractory metal - titanium nitride conductive structures and processes for forming the same. |
摘要 |
<p>The present invention provides a conductive structure for use in semiconductor devices. The structure can be used to interconnect the various diffusion regions or electrodes of devices formed on a processed semiconductor substrate to a layer of metal, to interconnect overlying layers of metal or to provide the gate electrode of an FET device formed on the surface of a semiconductor substrate. Various embodiments of the invention are described, but in broad form the active metallurgy of the present invention comprises a thin layer of titanium nitride and a thick layer of a refractory metal, e.g., tungsten or molybdenum, overlying the titanium nitride layer.</p> |
申请公布号 |
EP0284794(A1) |
申请公布日期 |
1988.10.05 |
申请号 |
EP19880103057 |
申请日期 |
1988.03.01 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CRONIN, JOHN E.;KAANTA, CARTER W.;LEACH, MICHAEL A.;LEE, PEI-ING P.;PAN, PAI-HUNG |
分类号 |
H01L23/52;H01L21/28;H01L21/3205;H01L21/768;H01L23/532;H01L29/43;H01L29/49;H01L29/78 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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