发明名称 MASK FOR X-RAY LITHOGRAPHY AND MANUFACTURE THEREOF
摘要 PURPOSE:To adopt a single-layer resist process hardly causing the generation of defects by forming an electrode layer for plating for an absorber pattern in double layers, exposing a resist, using the patterned plating electrode layer as a mask and electroplating a resist pattern after development with an X-ray absorbing metal. CONSTITUTION:With an X-ray mask sample, a light transmitting conductive film 2 and a conductive film 3 consisting of a (u) metallic thin-film are laminated onto an X-ray transmitting layer 1. An electron-beam resist 4 is attached onto these plating electrode layers 2, 3, and desired regions are irradiated with electron beams 5. The resist 4 is developed, and the light-non-transmitting conductive film 3 is removed through ion milling, etc., using a developing resist pattern as a mask. After the conductive film 3 is etched, the electron-beam resist is removed, and a photosensitive resist 6 is attached. The rear of a resist adhesive surface is illuminated with visible rays or ultraviolet rays. These illuminating beams are transmitted through the conductive film 2, but they are not transmitted through the residual conductive film 3, thus forming a desired resist pattern. An X-ray absorbing material is electroplated onto the conductive film 3, employing the resist pattern as a plating female die. Accordingly, plating gold 8 is molded onto the conductive film 3, and the so-called X-ray absorbing pattern is formed.
申请公布号 JPS63239815(A) 申请公布日期 1988.10.05
申请号 JP19870071455 申请日期 1987.03.27
申请人 HITACHI LTD 发明人 KUNIYOSHI SHINJI;KISHIMOTO AKIHIKO;SOGA TAKASHI;OGAWA TARO;KIMURA TAKESHI
分类号 G03F1/22;H01L21/027;H01L21/30 主分类号 G03F1/22
代理机构 代理人
主权项
地址