| 摘要 |
PURPOSE:To enhance the purity of the title single crystal by preheating a crucible contg. a raw material and a capsulating agent by a separate melting furnace to enclose the raw material with the capsulating agent, and then transferring the crucible to a pulling up furnace to grow a single crystal at the time of producing the compd. semiconductor single crystal by the LEC method. CONSTITUTION:A seed crystal is brought into contact with the raw material soln. enclosed by the capsulating agent in the pulling up furnace, and pulled up the seed crystal to produce the compd. semiconductor single crystal. In this case, the following constitution is used. Namely, the raw materials 5 and 6 and capsulating agent 7 contained in the crucible 4 is heated (heater 2) by a melting furnace 1 not using a carbon material in an inert gas atmosphere to melt the capsulating agent 7 to enclose the raw materials 5 and 6 with the capsulating agent 7, the crucible 4 contg. the materials is transferred into the pulling up furnace from the melting furnace 1, and a single crystal is grown.
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