| 摘要 |
PURPOSE:To reduce gate capacitance, and to increase the breakdown strength of a gate by forming a layer having low carrier concentration near the gate between the gate and an ohmic electrode in a self-alignment manner. CONSTITUTION:The title transistor has a Schottky gate 3 shaped onto an active layer 2 on a semi-insulating substrate 1, a high-concentration epitaxial layer 6 isolated from the gate 3 and formed onto the active layer 2 and an ohmic electrode 10 shaped onto the epitaxial layer 6. An impurity having a conductivity type different from the active layer 2 is implanted to the surface of an active layer region near the gate between the gate 3 and the ohmic electrode 10, and a layer, carrier concentration of which is reduced by the mutual compensation of carriers, is formed. Accordingly, gate capacitance is diminished, and gate breakdown strength can be increased, and high energy can be injected, and uniformity is improved. |
