| 摘要 |
PURPOSE:To drive an image sensor composed of an N-I-N element effectively by converting a reflected-beam row from a draft into an electric signal under the state in which low voltage is applied to a semiconductor element, extracting the electric signal as an output signal amplified under the state, in which high voltage is applied, and extracting information on the draft as electric-signal information. CONSTITUTION:When an image sensor composed of an N-I-N junction type semiconductor element, a photoelectric conversion amplification semiconductor device is driven, low bias voltage Vb having the fast optical speed of response is applied to the element, and a reflected-beam row pattern from a draft is converted into an electrical signal by utilizing the optical speed of response at that time. High bias voltage Va, ¦Va¦>¦Vb¦ and VaXVb>=0 are applied to the element, the electrical signal generated by photoelectric conversion is amplified, and the amplified output signal is not flowed through another amplifier circuit, etc., and is extracted as an output. Accordingly, the semiconductor device having photoelectric conversion action and further optical amplification action can be driven while characteristics thereof are utilized sufficiently.
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