| 摘要 |
PURPOSE:To make it possible to form a titanium-silicide layer having excellent heat-resisting property by a method wherein a reverse sputtering operation is performed using argon ions, and immediately after the active surface of silicon has been exposed, metal titanium is deposited in the same vacuum vessel. CONSTITUTION:When a shallow junction, backed with a titanium-silicide film 4, is formed on the substrate 1 on which an insulating film 2 to be used for element-to-element isolation is formed, a natural oxide film is removed by applying reverse sputtering on the silicon substrate 1 using argon ions, and the active surface of the silicon substrate 1 is exposed. Then, a metal titanium film 3 is deposited, and silicon ions are implanted for the purpose of mixing said titanium-silicon interface. As a result, the titanium-silicide layer having non-impaired uniformity even when a treatment is performed can be formed.
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