| 摘要 |
PURPOSE:To dissipate the heat of a semiconductor substrate at the time when the semiconductor base body is dry-etched efficiently to an etching pedestal through a fixing substance, and to prevent the thermal deformation of the semiconductor substrate by interposing the fixing substance between the etching pedestal and the semiconductor substrate placed onto the pedestal. CONSTITUTION:A fixing jig 3 to which a GaAs substrate 1 is fastened is placed onto a cooled etching pedestal 6 in an RIE device. A photosensitive resin 7 such as positive type resist Az is dripped onto the etching pedestal 6 at that time, and the fixing jig 3 is laminated. That is, a fixing substance such as the photosensitive resin 7 is interposed between the etching pedestal 6 and the fixing jig 3. Consequently, the GaAs substrate 1 is installed into the RIE device, and the surfaces exposed through openings in a mask 4 for RIE for the GaAs substrate 1 are etched through an RIE method. Etching is completed, through-holes reaching the surface of the GaAs substrate 1 are formed, and source electrodes S are exposed. Au 5 is evaporated onto the inner walls of the through-holes including the exposed source electrodes S and the whole rear of the GaAs substrate 1 through a vacuum deposition method, and the source electrodes S are connected mutually, thus completely shaping via holes.
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