| 摘要 |
PURPOSE:To facilitate preparation of cubic boron nitride film having high hardness, high heat conductivity, and high electric insulating property by generating electron cyclotron resonance plasma in a reaction chamber containing boron hydride and N2 introduced thereinto and impressing a bias voltage to a substrate in the reaction chamber. CONSTITUTION:A reaction chamber 1 and a vacuum chamber 3 housing a base material holder 6 having a substrate 7 comprising an Si wafer attached thereto is evacuated preliminarily to <=10<-8>Torr. Then, B2H6 (10% basing on argon) and gaseous N2 are introduced 2 into the chamber 1 at 10SccM and 4SccM flow rate, respectively, thus the internal pressure of the chamber is held at 2.7X10<-4>Torr. After heating 9 the substrate 7 at 350 deg.C, a magnetic field is impressed to the inside of the chamber 1 using a magnetic field impressing coil 5. Microwave is introduced 4 into the chamber 1 to generate thus electron cyclotron resonance plasma. Further, high frequency electric power is impressed to the holder 6 from a high frequency source 12 to generate thus a self bias. By this method, cubic BN film (rigid boron nitride film) having 0.1mum thickness is formed on the substrate 7.
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