| 摘要 |
PURPOSE:To form single nucleuses selectively even in combination of materials, in which difference between nucleus forming densities cannot be sufficiently provided, and to make it possible to grow crystals, by providing a crystal growing step and an etching step within a time during which nucleuses are hardly formed on the surface where nucleuses are not formed. CONSTITUTION:A surface, wherein nucleuses are not formed, has a small nucleus forming density. A nucleus forming surface has a sufficiently small area, in which a crystal is grown from only a single nucleus and has a nucleus forming density larger than that in the surface, wherein the nucleuses are not formed. Said surface and the nucleus forming surface are arranged in the neighboring positions on a substrate. The crystal is grown from the single nucleus, which is formed on the nucleus forming surface. In this crystal growing method, a crystal growing step and an etching step are provided within a time, in which the nucleus is not formed in the surface wherein the nucleuses are not formed. For example, nucleus forming surfaces 21-24 are formed on the substrate 1 having an SiO2 layer 5. When Si single crystals 3 are grown within a time the nucleuses are not formed on the SiO2 surface. Thereafter, polycrystalline Si 4 is etched away. The crystal growing step and the etching step such as these are repeated, and the Si single crystals 3 are grown on all of the nucleus forming surfaces 21-24.
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