| 摘要 |
PURPOSE:To eliminate the irregularity of guard ring effect as a whole APD by using a liquid growing method using a melt to form the guard ring in a semiconductor photodetector like the APD. CONSTITUTION:A light absorption layer 2 of one conductivity type indium gallium arsenide layer or an indium gallium arsenide layer is formed on one conductivity type indium phosphide substrate 1. A stopper layer 11 made or one conductivity type indium phosphide layer and a layer thickness control layer 12 made of one conductivity type indium gallium arsenide phosphide are formed, and a magnifying layer 4 made of an indium phosphide layer is then formed. Then, the layer 4 is removed to the depth arriving at part of the layer 12 except a photodetecting region, and the layer 4 remains in a mesa state at the photodetecting region. A guard ring layer 5 made of one conductivity type indium phosphide layer is formed around the remaining mesalike layer 4, and a photodetecting layer 6 is formed. Then, the layer 5 is formed by a liquid growing method using an unsaturated melt for the indium gallium arsenide.
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