| 摘要 |
<p>PURPOSE:To contrive to increase the strength of a bonding agent by a method wherein the size of the faces, which come into contact to conductor wirings, of the electrodes of a semiconductor element is made larger than that of the faces on the side of the semiconductor element. CONSTITUTION:The surface, whereon electrodes 14 are provided, of a semiconductor element 13 is alignged to the surface, whereon conductor wirings 12 are provided, of an insulating substrate 11 and the element 13 is fixed with an insulating bonding agent 15 formed between the element 13 and the substrate 11 in such a way that the wirings 12 coincide with the electrodes 14 of the element 13. The electrodes 14 of the element 13 and the wirings 12 are electrically come into contact to each other by contact and the size of the faces, which come into contact to the wirings 12, of the electrodes 14 of the element 13 is made larger than that of the faces on the side of the element 13. Accordingly, it becomes possible for the electrodes 14 of the element 13 to fulfil simultaneously even a role to function as wedges to the bonding agent 15, which cures between the element 13 and the substrate 11 to cement both. Thereby, the element 13 can be prevented from peeling from the bonding agent 15 and an increase in the bonding strength of the element 13 to the substrate 11 can be contrived.</p> |
