| 摘要 |
PURPOSE:To form single crystal and polycrystal in/to a controlled position and size by providing a small nucleus formation face and a large nucleus formation face on a nuleus nonformation face and applying selective formation technique of crystal. CONSTITUTION:Crystal growth is performed on a base material 1 provided with a nucleus nonformation face 2 small in nucleus formation density, small nucleus formation faces 3A and large nucleus formation faces 3B having both nucleus formation density larger than it and area smaller than it. The large nucleus formation faces 3B have nucleus formation density larger than the nucleus nonformation face 2 and have area sufficient to allow a plurality of nucleuses to be grown. Then single nucleus is formed on the small nucleus formation faces 3A and furthermore single crystal 4 is grown from this single nucleus so that it covers one part of the faces 2 and also polycrystalline films 5 are formed on the large nucleus formation faces 3B. Whole surfaces of the nucleus nonformation face 2 are covered with single crystal 4 and the polycrystalline films 5. |
