| 摘要 |
PURPOSE:To grow a crystal at a high rate where strains are not generated in the crystal lattice by providing two kinds of grids to shield an electron, and allowing a methyl radical to react while keeping the growing point of diamond cationic. CONSTITUTION:The grid 10 negatively charged for the surface of a substrate 1 on which diamond is grown and the grounded grid 9 are provided in the order described. At the growth point of the diamond formed on the substrate 1, the substrate 1 is shielded from the active species existing region 3 where the active species formed by a methyl radical and/or a methyl cation is present. The generation of strains in the crystal lattice of the diamond is prevented by this device, and a diamond crystal can be obtained at a high crystal growth rate.
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