发明名称 SELECTIVE FORMATION OF CRYSTAL
摘要 PURPOSE:To facilitate three-dimensional integration and formation of large area by performing crystal formation treatment to both a nucleus nonformation face small in nucleus formation density which is formed by contg. fluorine and a nucleus formation face, and growing single crystal from single nucleus on the nucleus formation face. CONSTITUTION:A nucleus nonformation face 22 contg. fluorine and small in nucleus formation density is formed on a single-crystal substrate 21. A nucleus formation face 23 is formed by implanting e.g. N<+> ions or the like on this nucleus nonformation face 22 and destroying it. This face 23 has small area sufficient to grow crystal of only single nucleus and has nucleus formation density larger than the nucleus formation density of the face 22. Single crystal 24 is grown from the single nucleus by performing crystal formation treatment to the faces 22, 23.
申请公布号 JPS63239189(A) 申请公布日期 1988.10.05
申请号 JP19870073525 申请日期 1987.03.27
申请人 CANON INC 发明人 OMI KAZUAKI
分类号 C30B25/00;C30B25/18;H01L21/205 主分类号 C30B25/00
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