| 摘要 |
PURPOSE:To easily obtain semiconductor crystal liable to form an element on an insulated layer by constituting an embedded type substrate of a three-layer structure and growing crystal while keeping the crosssection of a 2nd-layer material for forming a nucleus formation face large in nucleus formation density as a seed. CONSTITUTION:Both a material 3 for forming a nucleus formation face large in nucleus formation density and a material 4 for forming a nucleus nonformation face small in nucleus formation density are laminated in order on a nucleus nonformation face 2 small in nucleus formation density. Then a hole for exposing the nucleus nonformation face 2 is provided by an erosion method. Thereafter single crystal 5 is grown by performing crystal growth treatment to the exposed material 3 for forming the nucleus formation face and thereby the above-mentioned hole formed by the erosion method is buried.
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