| 摘要 |
PURPOSE:To obtain a photosensor, which can implement color reading at high resolution and has excellent electric insulation between neighboring light receiving parts, by providing a plurality of semiconductor layers through insulating layers in the direction of the thickness of the layers on the surface of a substrate, so that the semiconductor layers have different wavelength absorbance characteristics for light rays, which are sequentially inputted to the semiconductor layers along the thickness direction of the layers. CONSTITUTION:A plurality of semiconductor layers 22-24 are provided through insulating layers 21a-23a in the thickness direction of the layers on the surface of a substrate 21. The semiconductor layers 22-24 have the different wavelength absorbance characteristics for light rays, which are sequentially inputted into the semiconductor layers along the thickness direction of the layers. For example, the first light receiving part 22 comprising the first kind of a semiconductor single crystal is formed on the substrate 21 through the insulating layer 21a. The second light receiving part 23 comprising the second kind of a semiconductor single crystal is formed thereon through the insulating layer 22a. Then, the third light receiving part 24 comprising the third kind of a semiconductor single crystal is formed thereon through the insulating layer 23a. The main absorbing wavelengths of the wavelength absorbance characteristics of the light receiving parts 22-24 are the wavelengths corresponding to red light, green light and blue light, respectively. |
