| 摘要 |
PURPOSE:To make it possible to adopt a highly precise TTL alignment system by a method wherein synthetic quartz is used as the base material of a beam splitter, and the resin which is not absorbed into the wavelength region of an excimer light and alignment light respectively is used as a bonding agent. CONSTITUTION:The title exposure device is composed of an excimer light source 1, a reduction projection lens 7, a wafer stage 8, a mask holder 5, a beam splitter 6 and an alignment optical system, and thermoplastic resin which transmits at least both excimer light and alignment light is used as the bonding agent of the beam splitter 6. Then, after a mask and a wafer have been aligned using the alignment light, the exposure by the excimer light is made possible. As a result, the TTL alignment system can be used in the excimer exposure device wherein the exposure wavelength of a far ultraviolet region is used, and the degree of resolution and alignment accuracy necessary for manufacture of a supersuper LSI can be accomplished. |
