| 摘要 |
<p>The method comprises the steps of providing a layer of material on portions of the surface of a support structure; providing a polishing stop layer of substantially uniform thickness on different portions of the surface of said support structure, such that a first surface of said layer of material and a first surface of said polishing stop layer are substantially coplanar, said polishing stop layer being thinner than said layer of material; polishing the second surface of said layer of material to a point where a second surface of said polishing stop layer is encountered, such that the substantially uniform thickness of said polishing stop layer is used to define said layer of material to a layer of uniform thickness. In particular the method is used for forming improved silicon-on-insulator structures.</p> |
