| 摘要 |
PURPOSE:To prevent the generation of the change in a pattern shape during measurement, by scanning a position, which is separated from the end of a pattern by the magnitude of electron beam, by the electron beam. CONSTITUTION:The position 3 separated by about 0.5mum from the end of the org. resist pattern of a silicon substrate 1 is scanned by electron beam 4 and the reflected electron 6 is detected by a detector 5 and the output wave form thereof is accumulated on the memory of a computer. The result thereof is operated and the line width of the pattern 2 is measured from the two points becoming the max. and min. values of signal intensity. When measurement is repeated at the same position by this method, a change is eliminated in the line width measured value depending on the irradiation time of the electron beam. By this constitution, the surface contamination of the pattern is prevented by the action of the incident electron beam and the shape of the pattern can be measured without being changed.
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