| 摘要 |
PURPOSE:To reduce the collection amount of charge generated by radioactive particles by etching a semiconductor on an insulator film to form a recess larger in width than the opening of the film, and surrounding a substrate region of a part contacted with an energizing electrode mostly with an insulator. CONSTITUTION:An insulator film 103 is so formed as to have an opening at a part of one main surface of a first conductivity type semiconductor substrate 101, and a recess wider in width than that of an opening is formed at the tops of semiconductors 105-107 extended on the film 103 from the opening at its part in contact with the substrate 101. Then, insulator films 108, 113 and a conductor 109 to become a gate electrode are formed in the recess. The N-type silicon 107 which becomes a charge storage region is completely surrounded by an insulator except a slight part contacted with the silicon 105. Thus, a plane MOSFET can be reduced in size, an operable voltage determined by the channel length can be simultaneously increased as a current passage, and charge amount generated by radioactive particles can be reduced. |
