DRY ETCHING POSSIBLE POLY-LAYER RESIST FORMING METHOD USING GRAFT POLYMERIZATION BY ELECTRON BEAM

摘要

(1) coating photoresist on a silicone wafer and baking at over 200≦̸C for 1 hr; (2) coating silicone resin on the photoresist layer and scanning high energy electron beam to form a reactive group at the scanning area; (3) forming a graft polymer layer by reacting with vaporized organic monomer; and (4) etching silicone resin between patterns of the graft polymer layer by reactive-ion-etching with CF4/H2 vapor.