| 摘要 |
PURPOSE:To reduce the release of a film deposited on a plasma shield, etc., and to improve the quality of the film on a substrate by providing a heating means and a cooling means on the inside or outside of the plasma shield in the vacuum vessel of the title sputtering device. CONSTITUTION:The heater 6 and the cooling means 5 are provided to the plasma shield 4 furnished to a target 2 in the vacuum vessel 10 of the sputtering device, and the temp. of the plasma shield 4 during sputtering is adjusted to a constant temp. in the range 100-400 deg.C. The vapor-deposited film from the target 2 adhered to the part of the plasma shield 4 closest to the target 2 is adhered to the plasma shield 4 with high strength and is not released from the shield, hence the vapor-deposited film is not adhered to the film on the substrate, the quality of the film is not deteriorated, and the short-circuit accident due to the release of the film can be eliminated. |
