| 摘要 |
PURPOSE:To simplify the steps by depositing a boron-doped P-type polycrystalline silicon thin film to manufacture a thin film transistor. CONSTITUTION:A boron-doped P-type polycrystalline silicon thin film is deposited on an insulating transparent substrate 1-1, an island 1-2 is formed by photoetching, and a gate oxide film 1-3 is then formed. After a gate electrode 1-4 is formed, it is conducted in hydrogen plasma processing step, hydrogen ion implanting step or plasma nitride film forming step. Thus, an excellent CMOS polycrystalline silicon thin film transistor having a sharp rise, a small threshold voltage Vth, small OFF leakage current and substantially coincident absolute values of N-channel and P-channel Vth without increasing the number of steps can be performed in a process without increasing the number of steps. |
