| 摘要 |
PURPOSE:To easily form a W film on the surface of an insulator by radiating UV on the surface of each substrate having the insulator while in contact with a gaseous WF6-H2 mixture. CONSTITUTION:A film of an insulator such as silica, phosphosilicate glass or borophosphosilicate glass is formed on each of Si plates, part of the film is photoetched and the resulting substrates 1 are arranged in a reaction chamber 7 provided with UV sources 5. The chamber 7 is evacuated from the exhaust ports 6 and the substrates 1 are heated to 400 deg.C with a heater 2 to remove gas adsorbed on the surfaces of the substrates 1. While the substrates are kept at 250 deg.C and a gaseous WF2-H2 mixture as gaseous starting material is allowed to flow parallel to the surfaces of the substrates 1 from a gas feed pipe 3, UV is radiated on the surfaces of the substrates 1 from the UV sources 5. WF6 is reduced by H2 to deposit W on the insulators of the substrate 1. When the gaseous WF6-H2 mixture is allowed to flow perpendicularly or obliquely toward the surfaces of the substrates 1, W can be deposited on the insulators of the substrates 1 and the other parts.
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