发明名称 GAS ELECTROMOTIVE FORCE DEVICE
摘要 PURPOSE:To develop a voltage between electrodes by forming the electrodes on a porous silicon layer formed on the surface of a single-crystal silicon base and placing them in a gas atmosphere which has the polarities. CONSTITUTION:The porous silicon layer 11 is formed on one surface of the single crystal silicon base 10. An electrode 12 is formed at part of the surface of the silicon layer 11 and a lead wire is connected. Then an electrode 13 is formed in contact with the base 10. The porous silicon layer 11 is formed by anodizing one surface of a P-type single crystal silicon substrate 10 doped with boron in a hydrogen fluoride (HF) solution for a specific time. The electrode 12 on the silicon layer 11 is formed of solder alloy and gold by a normal method not over the entire surface of the silicon layer 11, but so that part of it is exposed. The electrode 13 can use any electrode which can be brought under ohmic contact. When the element is placed in a certain kind of gas atmosphere, the voltage is developed between the electrodes 12 and 13. The gas atmosphere is preferably an atmosphere of steam, ethanol vapor, or acetone vapor.
申请公布号 JPS63238544(A) 申请公布日期 1988.10.04
申请号 JP19870073442 申请日期 1987.03.27
申请人 NAKANO TOMOYASU;KINOSHITA AKIRA;TOKO INC 发明人 NAKANO TOMOYASU;KINOSHITA AKIRA;MOTOHASHI AKIRA
分类号 G01N27/12;G01N27/00;H01M14/00 主分类号 G01N27/12
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