| 摘要 |
PURPOSE:To enable the second piling (reworking) of Al when the formation of an upper layer Al wiring is defective, by connecting the upper layer wiring with a lower layer wiring via a film which is not etched by an Al etching solution. CONSTITUTION:A first layer Al 3 is piled on an oxide film 2 and next a resist 4 is used as a mask so as to etch the first layer Al 3. In succession, after an interlayer insulating film 5 is piled on the first layered Al 3 and the oxide film 2, a resist is used as a mask to etch the interlayer insulating film 5 and form a contact hole and then the resist is removed. Next, a film 6 of e.g., W, which is not etched by an Al etching solution, is formed by a chemical vapor growth method. W is not formed not on the SiO2 5 but on only the Al 3 inside the contact hole. Even if the upper layer Al is etched by a solution which contains phosphoric acid, for example, the lower layer Al is hence protected by the W 6 and not hence etched, so that the reworking of the upper layer Al is enabled.
|
