| 摘要 |
PURPOSE:To enable the exact peeling of a resist by the use of a resist peeling solution of low temperature, by performing ultraviolet-ray radiation under an atmosphere which contains oxygen and ozone and next dipping a substrate in the prescribed resist peeling solution. CONSTITUTION:One main surface of a translucent substrate is coated with a light- screening film made of chromium so as to manufacture a photo-mask blank light- screening film, and its light-screening film is coated with a negative electron beam resist, and next exposure of the negative electron beam resist is performed selectively by electron beams. Next, the negative electron beam resist is developed by a prescribed developing solution so as to form a resist pattern on the light-screening film. Next, the light-screening film is selectively etched by an etching solution so that a light- screening pattern is formed on one main surface of the translucent substrate to obtain a substrate with a light-screening pattern. Next, ultraviolet rays are radiated on the resist pattern, and the substrate with the light-screening pattern is dipped for a prescribed time serially in two resist peeling solutions which consist of hydrogen peroxide water and sulfuric acid respectively, so that the resist pattern is peeled from the light-screening pattern. The resist peeling solution of low temperature is thus used to enable the exact and short-time peeling of the resist. |
