| 摘要 |
PURPOSE:To prevent a gate oxidizing film from being broken by etching and to enable the formation of a fine pattern, by making magnetic field intensity set at 400 gausses or below in the vicinity of a surface of a cathode. CONSTITUTION:A magnetic field is supplied from an anode 16 side to a cathode 12 side so that magnetron discharge is generated by interaction of the magnetic field to a cathode effect voltage. Thereupon the magnetic field supplied from the anode 16 side is distributed to be largest in gaps formed between magnets and to be small on the magnets. The larger the magnetic field grows, the more steep this distribution becomes to reduce discharge, however, a large potential difference is generated between a magnetron discharge region and a normal glow discharge region and this potential difference causes a current to flow inside a wafer 13 and to break a gate oxidizing film 32. When the magnetic field intensity on a surface of the cathode 12 is set at 400 gausses or below, the potential difference becomes small to much reduce the breakage of the gate oxidizing film 32. Hence, the gate oxidizing film 32 can be completely prevented from being broken or so, and so this film is applicable to a variety of element formation processes.
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