| 摘要 |
PURPOSE:To prevent a metal wiring layer from breaking due to a stress between a semiconductor substrate and a sealing resin and adjacent metal wiring layers from short-circuiting by containing at least part of the sectional area of the wiring layer in a groove formed on the substrate. CONSTITUTION:Since a metal wiring layer 8 is formed to be contained partly at its sectional area in a groove 3, even if the layer 8 is displaced by a stress generated between a semiconductor substrate 1 and a sealing resin 10 in a temperature cycle test or the like, part of the layer 8 is engaged with the inner periphery of the groove 3 to stop the displacement of the layer 8. Thus, it can prevent the layer 8 from breaking due to the displacement of the layer 8 or adjacent another metal wiring layers from short-circuiting with it.
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