| 摘要 |
PURPOSE:To obtain integrated circuits where no electrically defective ones are included by leaving an silica film applied on a semiconductor substrate only at an Sb diffused layer formation region as an Sb silica film pattern and by forming an oxide film on its pattern as well as the semiconductor substrate. CONSTITUTION:After an Sb silica film 42 is applied on a semiconductor substrate 41 in the case of an Sb selective diffusion process, the Sb silica film 42 is left only at an Sb diffused layer formation region as an Sb silica film pattern 42a and an oxide film 43 is formed at the whole plane on the Sb silica film pattern 42a as well as the semiconductor substrate 41 and after that, an Sb selective diffusion is performed after heat treatment. In this way, no defect designated 'rosette' which is caused in a silicon dioxide film develops and also no Sb diffused layer is formed at a part other than the Sb diffused layer formation region. Thus, when a bipolar integrated circuit is formed, the advantage of its circuit is known by which neither inferior breakdown strength nor isolation failure develops. Then, its characteristic improves a yield rate of the integrated circuit.
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