| 摘要 |
PURPOSE:To eliminate scatterings in growth of films within one lot and between respective lots by an apparatus wherein a pressure gauge capable of issuing an output and an automatic flow rate controller for feeding inert gas are provided in the exhaust part of a vapor growth apparatus. CONSTITUTION:When a current is passed through a coil 5 using a high frequency power source 6, a suceptor 2 is heated due to the resultant induced current and semiconductor devices 3 placed thereon are heated. Next, when gas containing a film forming material is caused to flow from A, the gas is blown from nozzles 4 to cause the vapor reaction on the heated semiconductor devices 3, so that a film is formed on each semiconductor device 3. At the same time, the gas is filled in a bell jar furnace 1 and discharged into a main duct 11 through an exhaust duct 10. The static pressure in the main duct is fluctuated because it undergoes an influence from other equipments. In other words, the static pressure in the bell jar is fluctuated. On this occasion, the pressure in the bell jar is detected by a pressure gauge 7 capable of issuing an output and, concurrently, the output corresponding to the detected pressure is transmitted to an automatic flow rate controller 8, so that inert gas is fed from B in a range of 10-100l/min under control of pressure thereof. |
