| 摘要 |
PURPOSE:To prevent deterioration of electric characteristic of element and facilitate high integration density and high capacity of semiconductor integrated circuit through formation of microminiature pattern and flatness of silicon substrate surface by forming an oxide layer which will become an insulated isolation layer between elements through selective thermal oxidation between single crystal thin films formed like islands. CONSTITUTION:After the surface of semiconductor substrate 101 is selectively covered with a first insulating film layer 102, a semiconductor single crystal thin film layer 104 is formed on the surface of first insulating film 102 and semiconductor substrate 101. Thereafter, a plurality of single crystal thin film region 108 are formed like islands by selective etching of the semiconductor single crystal thin film layer 104 and a second insulating film 111 is formed between single crystal thin film regions 108 formed like islands. Elements are insulated and isolated on said first insulating film layer 102 and second insulating film layer 111. For instance, integrated circuit elements are mounted on the surface of single crystal thin film 108 formed like island and junction depth of P-N junction in such element is as deep as reaching said first insulating film layer 102. |
