| 摘要 |
PURPOSE:To attain high speed switching and to prevent an electrostatic induction type transistor(SIT) from being broken due to short by SEPP-connecting switching transistors(TRs) and applying switching power only by the ON operation of the TR. CONSTITUTION:The driving TRs Q51, Q52 are SEPP-connected and pulses with mutually reverse phases are inputted to the TR Q51, Q52 through a driving transformer T51 based on a signal pulse generated from a power supply 51 to mutually switch the TRs Q51, Q52. On the other hand, outputs are extracted from the source-drain common terminals of the TRs Q51, Q52 and driving power supplies E52, E53 are connected so as to turn on/off the SIT. Even it a signal pulse is interrupted or the TR Q51 is broken and short is continued, the SIT can be prevented from being broken due to the short by impressing a negative voltage to the gate of the SIT.
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