| 摘要 |
PURPOSE:To detect a thin film transistor (TR) where a short-circuit defect occurs by applying a selective signal to a source signal line and a gate signal line and measuring the current of an adjacent source signal line. CONSTITUTION:A voltage applying means 3 applies a voltage to a source signal line S2, then the selective voltage VON to a gate signal line G3, and a nonselect signal VOFF to other gate lines. A current outputted to an adjacent source signal line S3 is measured by a voltage measuring means 4. Two positions of thin film TRs where it is considered that a short-circuit defect occurs, namely, TS22 and TM22 are limited according to whether or not the voltage is present. Then currents which flow to the source signal line 3 when the selective voltage VON is applied to said gate signal lines G2 and G3 and when the selective voltage VON is applied to the gate signal lines G3 and G4 are measured. A thin film TR TS22 where a defect occurs is detected according to the comparison result between those currents.
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