发明名称 Mesa zener diode and method of manufacture thereof
摘要 A mesa Zener diode is described which is manufactured by ion implanting a region of opposite conductivity into a substrate; etching a moat in a surface of the substrate through the region of opposite conductivity; depositing an oxide layer having an opening exposing a portion of the mesa; and depositing top and bottom metals.
申请公布号 US4775643(A) 申请公布日期 1988.10.04
申请号 US19870056166 申请日期 1987.06.01
申请人 MOTOROLA INC. 发明人 WETTEROTH, THOMAS A.
分类号 H01L29/866;(IPC1-7):H01L21/70;H01L27/00;H01L21/44;H01L21/48 主分类号 H01L29/866
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