发明名称 |
Mesa zener diode and method of manufacture thereof |
摘要 |
A mesa Zener diode is described which is manufactured by ion implanting a region of opposite conductivity into a substrate; etching a moat in a surface of the substrate through the region of opposite conductivity; depositing an oxide layer having an opening exposing a portion of the mesa; and depositing top and bottom metals.
|
申请公布号 |
US4775643(A) |
申请公布日期 |
1988.10.04 |
申请号 |
US19870056166 |
申请日期 |
1987.06.01 |
申请人 |
MOTOROLA INC. |
发明人 |
WETTEROTH, THOMAS A. |
分类号 |
H01L29/866;(IPC1-7):H01L21/70;H01L27/00;H01L21/44;H01L21/48 |
主分类号 |
H01L29/866 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|