| 摘要 |
PURPOSE:To realize a super-lattice semiconductor possessing a band gap larger than a mixed crystal semiconductor of a equivalent constitution by a method wherein moleculars layers, which are one to ten molecules in thickness, of the components other than AlGaAs/GaAs series are laminated at an extremely short cycle for the construction of a super-lattice semiconductor. CONSTITUTION:A GaAs buffer layer 32 is formed on a (100) GaAs substrate 31 and next, a clad layer 33 is grown into a super-lattice semiconductor which is formed of 7 molecular layers (Zn), (CdS), (ZnS), (CdS), (ZnS), (CdS), and (CdS) constituting one cycle. A ZnSe0.94S0.08 mixed crystal semiconductor 34 is formed thereon as an active layer, and lastly a clad layer 35 is grown. By these processes, a lattice constant is identical to that of a Zn0.42Cd0.58S mixed crystal semiconductor, wherefore the clad layer 33 has a good lattice matching with the GaAs substrate 31 and moreover a band gap rises with improvement in short distance order. Consequently, a stable laser oscillation is attained by use of the clad layer in place of the Zn0.42Cd0.58S mixed crystal semiconductor. |
