| 摘要 |
PURPOSE:To enhance the close adhesion between a metal layer and an insulating film by a method wherein, after a conductor is formed on a side wall inside a connecting hole, the connecting hole is filled with the metal layer. CONSTITUTION:After an insulating film 2 has been formed in a conductor region 1 formed on a semiconductor substrate, a connecting hole 3 is formed in a desired position by using a lithographic technique and an etching method. Then, a conductor which matches well with the insulating film 2 of, e.g. amorphous silicon or the like is formed inside the connecting hole 3 by a CVD method, a sputtering method or the like; in succession, a prescribed part of this conduc tor is removed by an anisotropic etching method so as to leave the conductor 4 on a side wall of the connecting hole 3. After the connecting hole 3 where the conductor 4 is left has been filled with, e.g., tungsten by thrusting the tung sten selectively by the CVD method or the like, the surface of the insulating film 2 is flattened. After that, a wiring layer or the like is formed on the insulat ing film 2.
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