| 摘要 |
PURPOSE:To decrease the current density of a contact edge part and reduce the contact resistance, by making a dent in a diffusion region corresponding with the aperture of an insulating film serving as a contact hole, and filling this recessed part and the aperture of the insulating film with a metal layer, which is made an electrode. CONSTITUTION:On a semiconductor substrate 1, a diffusion region 2a is formed, on the whole surface of which an insulating film 3 is formed, and then an aperture serving as a contact hole is formed in an desired position corresponding with the diffusion region 2a. A part of the diffusion region 2a exposed through the fromed aperture is subjected to an etching to be eliminated and recessed. On the recessed part and the aperture of the insulating film 3, tungsten is selectively deposited to form an electrode, and the surface of the insulating film 3 is flatted. Accordingly, the electrode and the diffusion layer are brought into contact by the whole surface of the recessed part.
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