| 摘要 |
PURPOSE:To prevent crystal defects from being introduced into the epitaxial layer to be formed by integrally forming a melt holder in the lower member to be provided in the lower part of a substrate holder for holding a substrate, thereby preventing the molten oxide of the molt from depositing on the substrate. CONSTITUTION:Inserted into a heat-resistant quartz tube 21 is a lower member 23 which has a melt material 29 for epitaxial growth filled in a melt holder 28, and an upper member 22 is inserted into the sealed tube 21 with a substrate 25 and a substrate supporting plate 27 placed in a recess 24 of the upper member 22. Then, after sealing the sealed tube 21 by welding one end thereof, a supporting rod 32 is welded and provided to said sealed one end. Next, after introducing this sealed tube 21 into the furnace core tube in a heating furnace and fusing the melt material 29, the sealed tube 21 is rotated. With this, since the melt holder 28 is formed integrally with the lower member 23, there will be no fear that the oxide of the melt flows out from that portion into the sealed tube, and a clean melt containing no oxide is put in contact with the substrate, so that a high-quality epitaxial crystal is obtained in which no crystal defect occurs.
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