| 摘要 |
PURPOSE:To enable the high density and the high integration of a device by forming a groove at the position adjacent to a required electronic motion region in the surface region of a semiconductor substrate, by providing a wiring on the side wall of the groove and by bringing the above-mentioned electronic motion region into direct contact with the wiring. CONSTITUTION:Voltage is applied to a word wire 35, the conductivity type of the surface region of a single crystal silicon film 23 directly under the word wire 35 is inverted and a channel is formed. This makes diffusion layers 26a and 26b continuous. Then, if voltage is applied to a bit wire 30, an electric charge is transferred to polysilicon 30a via the diffusion layer 26b, the channel and the diffusion layer 26a. Accordingly, the electric charge is stored in a capacitor region which contains a cell plate 32 formed by the polysilicon 30a, a thin oxide film 31 and polysilicon to work as a memory advice. In this case, a bit wire 30b is formed on the side wall of a groove 25 and is brought into direct contact with the diffusion layer 26b. Accordingly, device can easily be highly integrated if the relation of the positions of the word wire 35 and the bit wire 30b, etc., are considered. |
