| 摘要 |
PURPOSE:To decrease an interior stress at a crystal end face by a method wherein a contact layer is rendered less than 1/4 times as thick as an action layer. CONSTITUTION:An n-Ca0.6Al0.4As layer 21 1.5mum, a Ga0.92Al0.08As layer 22 0.06 mum, a p-Ca0.6Al0.4As layer 23 0.5mum, and an n-Ca0.6Al0.4As layer 24 1mum in thickness are successively grown, thereafter a current block layer 24 and the p-type clad layer 23 are partially subjected to etching to be stripe-like for the formation of a stripe-like opening. Next, a p-Ca0.6Al0.4As layer 25 0.2 mum, a-Ca0.6Al0.4As layer 26 1.5mum, and a n-GaAs layer 50 5mum in thickness are grown, thereafter a substrate 10 and the contact layer 50 are subjected to etching to be 100mum and 1mum respectively in thickness. Thereafter, a Ti/Pt/Au layer 41 is evaporated on the contact 50 and an AuGe/Au layer 42 is also evaporated under 5 the substrate 10. By these processes, a contact layer is rendered 1/4 times as thick as an action layer, whereby an interior stress generated at a crystal end face can be reduced. |
