| 摘要 |
PURPOSE:To enable the pattern formation with high sensitivity and resolution by incorporating a polymer having less photoabsorption in the neighborhood of 249nm, a photoreaction product having a specified binding and a solvent in the titled material, and by dissolving only the exposed part of the titled material in an alkaline solution. CONSTITUTION:The titled material contains the polymer having the less photoabsorption in the neighborhood of 249nm, the photoreaction product having the binding shown by formula I and the solvent, and after exposing it, the titled material which only dissolves the exposed part in the alkaline solution, and does not dissolve the unexposed part in said solution, is obtd. Therefore, the two layer resist pattern with the high sensitivity, contrast, resolution and accuracy is formed by exposing it to especially a DUV light, and an excimer laser beam, followed by developing it. Thus, the refinement and the production yield of a semiconductor are improved. |
