| 摘要 |
PURPOSE:To form a vapor growth film having uniform thickness on the surface of a substrate to be grown by opposing a tabular high-frequency electrode to a meshy high-frequency electrode in parallel, and furnishing the substrate behind the meshy electrode to prevent the impression of a DC bias between the substrate and the electrodes. CONSTITUTION:In a growth vessel 1, the meshy second high-frequency electrode 5 having about 0.5-1mm sieve opening is provided on a substrate carrier 6, and opposed to the tabular first high-frequency electrode 4 in parallel with each other. The substrate 8 to be grown is set on the carrier 6 behind the second electrode 5, and supported under the conditions where the impression of a DC bias between the substrate 8 and the electrodes 4 and 5 is excluded. Under such conditions, a growth gas is introduced into the vessel 1, the pressure of the growth gas is adjusted, and a high-frequency power is impressed between the electrodes 4 and 5 to produce plasma between the electrodes 4 and 5. By this method, a vapor growth film having uniform thickness is grown on the substrate 8 at a high rate.
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