摘要 |
PURPOSE:To perform high temperature and corrosive gas directional control, by installing a valve which is movable between both gas inflow and outflow ports installed in a pipe and capable of closing either side of these inflow and outflow ports. CONSTITUTION:An inflow port 4 and an outflow port 5 both re installed in a gas pipe 1, and a gas stop plate 2 movable up and down is installed between these inflow and outflow ports 4 and 5 in addition. This gas stop plate 2 is usually situated in the position closing the inflow port 4 before gas is made to flow, and at the time of letting the specified gas flow, it is moved to the position where both these inflow and outflow ports 4 and 5 are opened, thus gas is delivered. Both up and down characteristics of the gas stop plate 2 are varied so as to alter each diameter of these gas inflow and outflow ports 4 and 5, and a distance between them, weight of the gas stop plate 2, and the form. With this constitution, high temperature and corrosive gas directional control can be carried out, thus a high-grade semiconductor wafer is attainable.
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