| 摘要 |
PURPOSE:To contrive the improvement of the heat resistance and plasma resistance of resist by a method wherein the initial heating temperature to the resist in a pressure reduced atmosphere is set at a temperature a little higher than the initial flow temperature of the resist and the resist is heated up at roughly the same speed as the rising speed of the flow temperature. CONSTITUTION:A semiconductor wafer 5 coated with resist 4 applied thereon is placed in advance on a wafer treating stand 6 heated a little higher than a flow temperature which is the heat-resistant temperature of the resist 4. At this time, the pressure in a treating chamber 7 is ready-reduced. Ultraviolet light-including light which is emitted from a high-pressure mercury-arc lamp 1 is irradiated on the resist 4. The flow temperature of the resist 4 is made to ride by this irradiation, but the heater power of the stand 6 is controlled to this and the temperature of the resists is always made to rise in a state that it is a little higher than the flow temperature. Thereby, the time to take for the treatment of the resists is significantly reduced to improve the treating capacity and even in case the resist films are thick, the heat resistance can be effectively improved up to their bottom parts. |
